DSEP6-06AS |
IXYS CORP |
|
Standard
|
600V
|
6A
|
2.02V @ 6A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
20ns
|
50µA @ 600V
|
-
|
2.8°C/W Jc
|
-40°C ~ 175°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
STPSC606G-TR |
STMICROELECTRONICS |
|
Silicon Carbide Schottky
|
600V
|
6A
|
1.7V @ 6A
|
No Recovery Time > 500mA (Io)
|
0ns
|
75µA @ 600V
|
375pF @ 0V, 1MHz
|
2.8°C/W Jc
|
-40°C ~ 175°C
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
STPSC606D |
STMICROELECTRONICS |
|
Silicon Carbide Schottky
|
600V
|
6A
|
1.7V @ 6A
|
No Recovery Time > 500mA (Io)
|
0ns
|
75µA @ 600V
|
375pF @ 0V, 1MHz
|
2.8°C/W Jc
|
-40°C ~ 175°C
|
Through Hole
|
TO-220-2
|
STPSC6H065G-TR |
STMICROELECTRONICS |
|
Silicon Carbide Schottky
|
650V
|
6A
|
1.75V @ 6A
|
No Recovery Time > 500mA (Io)
|
0ns
|
60µA @ 650V
|
300pF @ 0V, 1MHz
|
2.4°C/W Jc
|
-40°C ~ 175°C
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
STPSC6H065D |
STMICROELECTRONICS |
|
Silicon Carbide Schottky
|
650V
|
6A
|
1.75V @ 6A
|
No Recovery Time > 500mA (Io)
|
0ns
|
60µA @ 650V
|
300pF @ 0V, 1MHz
|
2.4°C/W Jc
|
-40°C ~ 175°C
|
Through Hole
|
TO-220-2
|
STPSC6H065B-TR |
STMICROELECTRONICS |
|
Silicon Carbide Schottky
|
650V
|
6A
|
1.75V @ 6A
|
No Recovery Time > 500mA (Io)
|
0ns
|
60µA @ 650V
|
300pF @ 0V, 1MHz
|
2.4°C/W Jc
|
-40°C ~ 175°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
STPSC6H12B-TR1 |
STMICROELECTRONICS |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
6A
|
1.9V @ 6A
|
No Recovery Time > 500mA (Io)
|
0ns
|
400µA @ 1200V
|
330pF @ 0V, 1MHz
|
1.9°C/W Jc
|
-40°C ~ 175°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|