| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| EGP50C-E3/54 | VISHAY SEMICONDUCTORS | Standard | 150V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 95pF @ 4V, 1MHz | 20°C/W Ja | -65°C ~ 150°C | Through Hole | DO-201AA, DO-27, Axial | |
| EGP50A-E3/54 | VISHAY SEMICONDUCTORS | Standard | 50V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 95pF @ 4V, 1MHz | 20°C/W Ja | -65°C ~ 150°C | Through Hole | DO-201AA, DO-27, Axial | |
| EGP50G-E3/54 | VISHAY SEMICONDUCTORS | Standard | 400V | 5A | 1.25V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 75pF @ 4V, 1MHz | 20°C/W Ja | -65°C ~ 150°C | Through Hole | DO-201AA, DO-27, Axial | |
| EGP50A-E3/73 | VISHAY SEMICONDUCTORS | Standard | 50V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 95pF @ 4V, 1MHz | 20°C/W Ja | -65°C ~ 150°C | Through Hole | DO-201AA, DO-27, Axial | |
| EGP50B-E3/73 | VISHAY SEMICONDUCTORS | Standard | 100V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 95pF @ 4V, 1MHz | 20°C/W Ja | -65°C ~ 150°C | Through Hole | DO-201AA, DO-27, Axial | |
| EGP50C-E3/73 | VISHAY SEMICONDUCTORS | Standard | 150V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | 95pF @ 4V, 1MHz | 20°C/W Ja | -65°C ~ 150°C | Through Hole | DO-201AA, DO-27, Axial | |
| EGP50D-E3/73 | VISHAY SEMICONDUCTORS | Standard | 200V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 95pF @ 4V, 1MHz | 20°C/W Ja | -65°C ~ 150°C | Through Hole | DO-201AA, DO-27, Axial | |
| EGP50F-E3/73 | VISHAY SEMICONDUCTORS | Standard | 300V | 5A | 1.25V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 75pF @ 4V, 1MHz | 20°C/W Ja | -65°C ~ 150°C | Through Hole | DO-201AA, DO-27, Axial | |
| EGP50G-E3/73 | VISHAY SEMICONDUCTORS | Standard | 400V | 5A | 1.25V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 75pF @ 4V, 1MHz | 20°C/W Ja | -65°C ~ 150°C | Through Hole | DO-201AA, DO-27, Axial | |
| EGP50B-E3/54 | VISHAY SEMICONDUCTORS | Standard | 100V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 95pF @ 4V, 1MHz | 20°C/W Ja | -65°C ~ 150°C | Through Hole | DO-201AA, DO-27, Axial |
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