SB570-T |
DIODES INC |
|
Schottky
|
70V
|
5A
|
800mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
500µA @ 70V
|
-
|
10°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
SB580-T |
DIODES INC |
|
Schottky
|
80V
|
5A
|
800mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
500µA @ 80V
|
-
|
10°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
SB5100-T |
DIODES INC |
|
Schottky
|
100V
|
5A
|
800mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
500µA @ 100V
|
-
|
10°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
SB590-T |
DIODES INC |
|
Schottky
|
90V
|
5A
|
800mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
500µA @ 90V
|
-
|
10°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
GI820-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
50V
|
5A
|
1.1V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 50V
|
300pF @ 4V, 1MHz
|
10°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
P600, Axial
|
GI822-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
200V
|
5A
|
1.1V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 200V
|
300pF @ 4V, 1MHz
|
10°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
P600, Axial
|
GI822-E3/73 |
VISHAY SEMICONDUCTORS |
|
Standard
|
200V
|
5A
|
1.1V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 200V
|
300pF @ 4V, 1MHz
|
10°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
P600, Axial
|
GI828-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
800V
|
5A
|
1.1V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 800V
|
300pF @ 4V, 1MHz
|
10°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
P600, Axial
|
GI826-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
600V
|
5A
|
1.1V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 600V
|
300pF @ 4V, 1MHz
|
10°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
P600, Axial
|
GI821-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
100V
|
5A
|
1.1V @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
200ns
|
10µA @ 100V
|
300pF @ 4V, 1MHz
|
10°C/W Ja
|
-50°C ~ 150°C
|
Through Hole
|
P600, Axial
|