5A,Current - Average Rectified (Io)
75pF @ 4V, 1MHz,Capacitance @ Vr, F
8 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
EGP50G-E3/54 VISHAY SEMICONDUCTORS
Standard 400V 5A 1.25V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 50ns 5µA @ 400V 75pF @ 4V, 1MHz 20°C/W Ja -65°C ~ 150°C Through Hole DO-201AA, DO-27, Axial
EGP50F-E3/73 VISHAY SEMICONDUCTORS
Standard 300V 5A 1.25V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 50ns 5µA @ 300V 75pF @ 4V, 1MHz 20°C/W Ja -65°C ~ 150°C Through Hole DO-201AA, DO-27, Axial
EGP50G-E3/73 VISHAY SEMICONDUCTORS
Standard 400V 5A 1.25V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 50ns 5µA @ 400V 75pF @ 4V, 1MHz 20°C/W Ja -65°C ~ 150°C Through Hole DO-201AA, DO-27, Axial
EGP50F-E3/54 VISHAY SEMICONDUCTORS
Standard 300V 5A 1.25V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 50ns 5µA @ 300V 75pF @ 4V, 1MHz 20°C/W Ja -65°C ~ 150°C Through Hole DO-201AA, DO-27, Axial
EGP50FHE3/73 VISHAY SEMICONDUCTORS
Standard 300V 5A 1.25V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 50ns 5µA @ 300V 75pF @ 4V, 1MHz 20°C/W Ja -65°C ~ 150°C Through Hole DO-201AA, DO-27, Axial
EGP50GHE3/73 VISHAY SEMICONDUCTORS
Standard 400V 5A 1.25V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 50ns 5µA @ 400V 75pF @ 4V, 1MHz 20°C/W Ja -65°C ~ 150°C Through Hole DO-201AA, DO-27, Axial
EGP50FHE3/54 VISHAY SEMICONDUCTORS
Standard 300V 5A 1.25V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 50ns 5µA @ 300V 75pF @ 4V, 1MHz 20°C/W Ja -65°C ~ 150°C Through Hole DO-201AA, DO-27, Axial
EGP50GHE3/54 VISHAY SEMICONDUCTORS
Standard 400V 5A 1.25V @ 5A Fast Recovery =< 500ns, > 200mA (Io) 50ns 5µA @ 400V 75pF @ 4V, 1MHz 20°C/W Ja -65°C ~ 150°C Through Hole DO-201AA, DO-27, Axial