| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDH04S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | 3.6°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDH04SG60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 4A (DC) | 2.3V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 25µA @ 600V | 80pF @ 1V, 1MHz | 3.5°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDH04G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 4A (DC) | 1.7V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 140µA @ 650V | 130pF @ 1V, 1MHz | 3.1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| IDV04S60C | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | 5.6°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 Full Pack | |
| SDT04S60 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 150pF @ 0V, 1MHz | 4.1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| SDD04S60 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 150pF @ 0V, 1MHz | 4.1°C/W Jc | -55°C ~ 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| SIDC11D60SIC3 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 600V | 4A (DC) | 1.9V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 150pF @ 1V, 1MHz | - | -55°C ~ 175°C | Surface Mount | Wafer |
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