IDW40G65C5 |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
650V
|
40A (DC)
|
1.7V @ 40A
|
No Recovery Time > 500mA (Io)
|
0ns
|
1.4mA @ 650V
|
1140pF @ 1V, 1MHz
|
0.8°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-247-3
|
VFT4045BP-M3/4W |
VISHAY SEMICONDUCTORS |
|
Schottky
|
45V
|
40A (DC)
|
670mV @ 40A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
3mA @ 45V
|
-
|
4°C/W Jc
|
200°C (Max)
|
Through Hole
|
TO-220-2
|
VBT4045BP-E3/4W |
VISHAY SEMICONDUCTORS |
|
Schottky
|
45V
|
40A (DC)
|
670mV @ 40A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
3mA @ 45V
|
-
|
0.8°C/W Jc
|
200°C (Max)
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
VBT4045BP-E3/8W |
VISHAY SEMICONDUCTORS |
|
Schottky
|
45V
|
40A (DC)
|
670mV @ 40A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
3mA @ 45V
|
-
|
0.8°C/W Jc
|
200°C (Max)
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
VT4045BP-M3/4W |
VISHAY SEMICONDUCTORS |
|
Schottky
|
45V
|
40A (DC)
|
670mV @ 40A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
3mA @ 45V
|
-
|
0.8°C/W Jc
|
200°C (Max)
|
Through Hole
|
TO-220-2
|