40A (DC),Current - Average Rectified (Io)
5 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
IDW40G65C5 INFINEON TECHNOLOGIES AG
Silicon Carbide Schottky 650V 40A (DC) 1.7V @ 40A No Recovery Time > 500mA (Io) 0ns 1.4mA @ 650V 1140pF @ 1V, 1MHz 0.8°C/W Jc -55°C ~ 175°C Through Hole TO-247-3
VFT4045BP-M3/4W VISHAY SEMICONDUCTORS
Schottky 45V 40A (DC) 670mV @ 40A Fast Recovery =< 500ns, > 200mA (Io) - 3mA @ 45V - 4°C/W Jc 200°C (Max) Through Hole TO-220-2
VBT4045BP-E3/4W VISHAY SEMICONDUCTORS
Schottky 45V 40A (DC) 670mV @ 40A Fast Recovery =< 500ns, > 200mA (Io) - 3mA @ 45V - 0.8°C/W Jc 200°C (Max) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
VBT4045BP-E3/8W VISHAY SEMICONDUCTORS
Schottky 45V 40A (DC) 670mV @ 40A Fast Recovery =< 500ns, > 200mA (Io) - 3mA @ 45V - 0.8°C/W Jc 200°C (Max) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
VT4045BP-M3/4W VISHAY SEMICONDUCTORS
Schottky 45V 40A (DC) 670mV @ 40A Fast Recovery =< 500ns, > 200mA (Io) - 3mA @ 45V - 0.8°C/W Jc 200°C (Max) Through Hole TO-220-2