1N5822 |
STMICROELECTRONICS |
|
Schottky
|
40V
|
3A
|
525mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
2mA @ 40V
|
-
|
80°C/W Ja
|
150°C (Max)
|
Through Hole
|
DO-201AD, Axial
|
1N5822RL |
STMICROELECTRONICS |
|
Schottky
|
40V
|
3A
|
525mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
2mA @ 40V
|
-
|
80°C/W Ja
|
150°C (Max)
|
Through Hole
|
DO-201AD, Axial
|
DLE30C |
ON SEMICONDUCTOR |
|
Standard
|
200V
|
3A
|
980mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 400V
|
-
|
80°C/W Ja
|
150°C (Max)
|
Through Hole
|
DO-201AD, Axial
|
DLE30C-KC9 |
ON SEMICONDUCTOR |
|
Standard
|
200V
|
3A
|
980mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 400V
|
-
|
80°C/W Ja
|
150°C (Max)
|
Through Hole
|
DO-201AD, Axial
|
DLE30E |
ON SEMICONDUCTOR |
|
Standard
|
400V
|
3A
|
1.25V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
30ns
|
20µA @ 400V
|
-
|
80°C/W Ja
|
150°C (Max)
|
Through Hole
|
DO-201AD, Axial
|
1N5820RL |
STMICROELECTRONICS |
|
Schottky
|
20V
|
3A
|
475mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
2mA @ 20V
|
-
|
80°C/W Ja
|
150°C (Max)
|
Through Hole
|
DO-201AD, Axial
|
1N5820 |
STMICROELECTRONICS |
|
Schottky
|
20V
|
3A
|
475mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
2mA @ 20V
|
-
|
80°C/W Ja
|
150°C (Max)
|
Through Hole
|
DO-201AD, Axial
|
1N5821 |
STMICROELECTRONICS |
|
Schottky
|
30V
|
3A
|
500mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
2mA @ 30V
|
-
|
80°C/W Ja
|
150°C (Max)
|
Through Hole
|
DO-201AD, Axial
|
1N5821RL |
STMICROELECTRONICS |
|
Schottky
|
30V
|
3A
|
500mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
2mA @ 30V
|
-
|
80°C/W Ja
|
150°C (Max)
|
Through Hole
|
DO-201AD, Axial
|
31GF4-E3/73 |
VISHAY SEMICONDUCTORS |
|
Standard
|
400V
|
3A
|
1.25V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
30ns
|
20µA @ 400V
|
-
|
80°C/W Ja
|
-40°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|