| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BY397P-E3/54 | VISHAY SEMICONDUCTORS | Standard | 200V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 10µA @ 200V | 28pF @ 4V, 1MHz | 22°C/W Ja | -50°C ~ 125°C | Through Hole | DO-201AD, Axial | |
| BY398P-E3/54 | VISHAY SEMICONDUCTORS | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 10µA @ 400V | 28pF @ 4V, 1MHz | 22°C/W Ja | -50°C ~ 125°C | Through Hole | DO-201AD, Axial | |
| GI850-E3/54 | VISHAY SEMICONDUCTORS | Standard | 50V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 50V | 28pF @ 4V, 1MHz | 22°C/W Ja | -50°C ~ 150°C | Through Hole | DO-201AD, Axial | |
| GI858-E3/54 | VISHAY SEMICONDUCTORS | Standard | 800V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 800V | 28pF @ 4V, 1MHz | 22°C/W Ja | -50°C ~ 150°C | Through Hole | DO-201AD, Axial | |
| GI917-E3/54 | VISHAY SEMICONDUCTORS | Standard | 800V | 3A | 1.25V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 750ns | 10µA @ 800V | - | 22°C/W Ja | -50°C ~ 150°C | Through Hole | DO-201AD, Axial | |
| SRP300D-E3/54 | VISHAY SEMICONDUCTORS | Standard | 200V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 200V | 28pF @ 4V, 1MHz | 22°C/W Ja | -50°C ~ 125°C | Through Hole | DO-201AD, Axial | |
| SRP300J-E3/54 | VISHAY SEMICONDUCTORS | Standard | 600V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 600V | 28pF @ 4V, 1MHz | 22°C/W Ja | -50°C ~ 125°C | Through Hole | DO-201AD, Axial | |
| GI856-E3/54 | VISHAY SEMICONDUCTORS | Standard | 600V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 600V | 28pF @ 4V, 1MHz | 22°C/W Ja | -50°C ~ 150°C | Through Hole | DO-201AD, Axial | |
| BY399P-E3/54 | VISHAY SEMICONDUCTORS | Standard | 800V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 10µA @ 800V | 28pF @ 4V, 1MHz | 22°C/W Ja | -50°C ~ 125°C | Through Hole | DO-201AD, Axial | |
| GI851-E3/54 | VISHAY SEMICONDUCTORS | Standard | 100V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 100V | 28pF @ 4V, 1MHz | 22°C/W Ja | -50°C ~ 150°C | Through Hole | DO-201AD, Axial |
© 2016 Copyright
