1N5402 |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
200V
|
3A
|
1.2V @ 3A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
5µA @ 200V
|
30pF @ 4V, 1MHz
|
20°C/W Ja
|
-55°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
1N5401 |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
100V
|
3A
|
1.2V @ 3A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
5µA @ 100V
|
30pF @ 4V, 1MHz
|
20°C/W Ja
|
-55°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
1N5408 |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
1000V (1kV)
|
3A
|
1.2V @ 3A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
5µA @ 1000V
|
30pF @ 4V, 1MHz
|
20°C/W Ja
|
-55°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
UF3006-G |
COMCHIP TECHNOLOGY CORP |
|
Standard
|
600V
|
3A
|
1.7V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
75ns
|
5µA @ 600V
|
30pF @ 4V, 1MHz
|
20°C/W Ja
|
-55°C ~ 125°C
|
Through Hole
|
DO-201AA, DO-27, Axial
|
UF3006-HF |
COMCHIP TECHNOLOGY CORP |
|
Standard
|
600V
|
3A
|
1.7V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
75ns
|
5µA @ 600V
|
30pF @ 4V, 1MHz
|
20°C/W Ja
|
-55°C ~ 125°C
|
Through Hole
|
DO-201AA, DO-27, Axial
|
UF3007-G |
COMCHIP TECHNOLOGY CORP |
|
Standard
|
800V
|
3A
|
1.7V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
75ns
|
5µA @ 800V
|
30pF @ 4V, 1MHz
|
20°C/W Ja
|
-55°C ~ 125°C
|
Through Hole
|
DO-201AA, DO-27, Axial
|
UF3007-HF |
COMCHIP TECHNOLOGY CORP |
|
Standard
|
800V
|
3A
|
1.7V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
75ns
|
5µA @ 800V
|
30pF @ 4V, 1MHz
|
20°C/W Ja
|
-55°C ~ 125°C
|
Through Hole
|
DO-201AA, DO-27, Axial
|
UF3008-G |
COMCHIP TECHNOLOGY CORP |
|
Standard
|
1000V (1kV)
|
3A
|
1.7V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
75ns
|
5µA @ 1000V
|
30pF @ 4V, 1MHz
|
20°C/W Ja
|
-55°C ~ 125°C
|
Through Hole
|
DO-201AA, DO-27, Axial
|
UF3008-HF |
COMCHIP TECHNOLOGY CORP |
|
Standard
|
1000V (1kV)
|
3A
|
1.7V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
75ns
|
5µA @ 1000V
|
30pF @ 4V, 1MHz
|
20°C/W Ja
|
-55°C ~ 125°C
|
Through Hole
|
DO-201AA, DO-27, Axial
|
UG3005-T |
DIODES INC |
|
Standard
|
600V
|
3A
|
1.7V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
75ns
|
5µA @ 600V
|
30pF @ 4V, 1MHz
|
60°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|