3A,Current - Average Rectified (Io)
600µA @ 60V, Reverse Leakage Current @ Vr
6 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
MBR360RLG ON SEMICONDUCTOR
Schottky 60V 3A 740mV @ 3A Fast Recovery =< 500ns, > 200mA (Io) - 600µA @ 60V - 28°C/W Ja -65°C ~ 150°C Through Hole DO-201AA, DO-27, Axial
MBR360G ON SEMICONDUCTOR
Schottky 60V 3A 740mV @ 3A Fast Recovery =< 500ns, > 200mA (Io) - 600µA @ 60V - 28°C/W Ja -65°C ~ 150°C Through Hole DO-201AA, DO-27, Axial
MBR360RL ON SEMICONDUCTOR
Schottky 60V 3A 740mV @ 3A Fast Recovery =< 500ns, > 200mA (Io) - 600µA @ 60V - 28°C/W Ja -65°C ~ 150°C Through Hole DO-201AA, DO-27, Axial
MBR360 ON SEMICONDUCTOR
Schottky 60V 3A 740mV @ 3A Fast Recovery =< 500ns, > 200mA (Io) - 600µA @ 60V - 28°C/W Ja -65°C ~ 150°C Through Hole DO-201AA, DO-27, Axial
VS-MBR360 VISHAY SEMICONDUCTORS
Schottky 60V 3A 730mV @ 3A Fast Recovery =< 500ns, > 200mA (Io) - 600µA @ 60V - 30°C/W Jl -40°C ~ 150°C Through Hole C-16, Axial
VS-MBR360TR VISHAY SEMICONDUCTORS
Schottky 60V 3A 730mV @ 3A Fast Recovery =< 500ns, > 200mA (Io) - 600µA @ 60V - 30°C/W Jl -40°C ~ 150°C Through Hole C-16, Axial