3A,Current - Average Rectified (Io)
600µA @ 50V, Reverse Leakage Current @ Vr
6 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
MBR350RLG ON SEMICONDUCTOR
Schottky 50V 3A 740mV @ 3A Fast Recovery =< 500ns, > 200mA (Io) - 600µA @ 50V - 28°C/W Ja -65°C ~ 150°C Through Hole DO-201AA, DO-27, Axial
MBR350RL ON SEMICONDUCTOR
Schottky 50V 3A 740mV @ 3A Fast Recovery =< 500ns, > 200mA (Io) - 600µA @ 50V - 28°C/W Ja -65°C ~ 150°C Through Hole DO-201AA, DO-27, Axial
V3PAN50-M3/I VISHAY SEMICONDUCTORS
Schottky 50V 3A 540mV @ 3A Fast Recovery =< 500ns, > 200mA (Io) - 600µA @ 50V 480pF @ 4V, 1MHz - - Surface Mount DO-221BC, SMA Flat Leads Exposed Pad
V4PAN50-M3/I VISHAY SEMICONDUCTORS
Schottky 50V 3A 430mV @ 2A Fast Recovery =< 500ns, > 200mA (Io) - 600µA @ 50V 480pF @ 4V, 1MHz - - Surface Mount DO-221BC, SMA Flat Leads Exposed Pad
VS-MBR350 VISHAY SEMICONDUCTORS
Schottky 50V 3A 730mV @ 3A Fast Recovery =< 500ns, > 200mA (Io) - 600µA @ 50V - 30°C/W Jl -40°C ~ 150°C Through Hole C-16, Axial
VS-MBR350TR VISHAY SEMICONDUCTORS
Schottky 50V 3A 730mV @ 3A Fast Recovery =< 500ns, > 200mA (Io) - 600µA @ 50V - 30°C/W Jl -40°C ~ 150°C Through Hole C-16, Axial