| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N5553 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 800V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | - | 22°C/W Jl | -65°C ~ 175°C | - | - | |
| 1N5553US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 800V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | - | 6.5°C/W Jl | -65°C ~ 175°C | - | - | |
| JAN1N5553 | MICROSEMI CORP | Standard | 800V | 3A | 1.3V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | - | 22°C/W Jl | -65°C ~ 175°C | Through Hole | B, Axial | |
| 1N5627-TR | VISHAY SEMICONDUCTORS | Avalanche | 800V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 7.5µs | 1µA @ 800V | 60pF @ 4V, 1MHz | 70°C/W Ja | -55°C ~ 175°C | Through Hole | SOD-64, Axial |
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