Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
1N5554 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 1000V (1kV) | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | - | 22°C/W Jl | -65°C ~ 175°C | - | - | |
1N5554US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 1000V (1kV) | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | - | 6.5°C/W Jl | -65°C ~ 175°C | - | - | |
JAN1N5554 | MICROSEMI CORP | Standard | 1000V (1kV) | 3A | 1.3V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | - | 22°C/W Jl | -65°C ~ 175°C | Through Hole | B, Axial |