| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N5187 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 2µA @ 200V | - | 20°C/W Jl | -65°C ~ 175°C | Through Hole | B, Axial | |
| 1N5188US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 2µA @ 400V | - | 10°C/W Jl | -65°C ~ 175°C | Through Hole | B, Axial | |
| 1N5186 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 2µA @ 100V | - | 20°C/W Jl | -65°C ~ 175°C | Through Hole | B, Axial | |
| 1N5188 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 2µA @ 400V | - | 20°C/W Jl | -65°C ~ 175°C | Through Hole | B, Axial | |
| 1N5415 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 50V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 50V | - | 22°C/W Jl | -65°C ~ 175°C | Through Hole | B, Axial | |
| 1N5186US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 2µA @ 100V | - | 10°C/W Jl | -65°C ~ 175°C | Through Hole | B, Axial | |
| 1N5187US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 2µA @ 200V | - | 10°C/W Jl | -65°C ~ 175°C | Through Hole | B, Axial | |
| 1N5416 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 100V | - | 22°C/W Jl | -65°C ~ 175°C | Through Hole | B, Axial | |
| JANS1N5809 | MICROSEMI CORP | Standard | 100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | 22°C/W Jl | -65°C ~ 175°C | Through Hole | B, Axial | |
| JANS1N5552 | MICROSEMI CORP | Standard | 600V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | 22°C/W Jl | -65°C ~ 175°C | Through Hole | B, Axial |
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