| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| APT10SCD120B | MICROSEMI POWER PRODUCTS GROUP | Silicon Carbide Schottky | 1200V (1.2kV) | 36A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 600pF @ 0V, 1MHz | 1°C/W Jc | -55°C ~ 150°C | Through Hole | TO-247-3 |
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