| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IDW30G65C5 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 650V | 30A (DC) | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 1.1mA @ 650V | 860pF @ 1V, 1MHz | 1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-247-3 | |
| SIDC08D60C6 | INFINEON TECHNOLOGIES AG | Standard | 600V | 30A (DC) | 1.95V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | -40°C ~ 175°C | Surface Mount | Wafer | |
| SIDC08D60C6Y | INFINEON TECHNOLOGIES AG | Standard | 600V | 30A (DC) | 1.95V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | -40°C ~ 175°C | Surface Mount | Wafer | |
| SIDC09D60F6 | INFINEON TECHNOLOGIES AG | Standard | 600V | 30A (DC) | 1.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | -40°C ~ 175°C | Surface Mount | Wafer | |
| SIDC14D60E6 | INFINEON TECHNOLOGIES AG | Standard | 600V | 30A (DC) | 1.25V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | -55°C ~ 150°C | Surface Mount | Wafer | |
| SIDC14D60E6Y | INFINEON TECHNOLOGIES AG | Standard | 600V | 30A (DC) | 1.25V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | -55°C ~ 150°C | Surface Mount | Wafer | |
| RJU6054TDPP-EJ#T2 | RENESAS ELECTRONICS CORP | Standard | 600V | 30A (DC) | 3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | - | 150°C (Max) | Through Hole | TO-220-2 Full Pack | |
| VBT3045BP-E3/4W | VISHAY SEMICONDUCTORS | Schottky | 45V | 30A (DC) | 700mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 45V | - | 1°C/W Jc | 200°C (Max) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| VFT3045BP-M3/4W | VISHAY SEMICONDUCTORS | Schottky | 45V | 30A (DC) | 700mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 45V | - | 4.2°C/W Jc | 200°C (Max) | Through Hole | TO-220-2 | |
| VBT3045BP-E3/8W | VISHAY SEMICONDUCTORS | Schottky | 45V | 30A (DC) | 700mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 45V | - | 1°C/W Jc | 200°C (Max) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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