| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DSS17-06CR | IXYS CORP | Schottky | 600V | 17A | 3.32V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 600V | - | 0.25°C/W Cs | -55°C ~ 175°C | Through Hole | - | |
| DSEI20-12A | IXYS CORP | Standard | 1200V (1.2kV) | 17A | 2.15V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 750µA @ 1200V | - | 1.6°C/W Jc | -40°C ~ 150°C | Through Hole | TO-220-2 | |
| C2D10120A | CREE INC | Silicon Carbide Schottky | 1200V (1.2kV) | 17A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1000pF @ 0V, 1MHz | 0.48°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| APT10SCD65K | MICROSEMI POWER PRODUCTS GROUP | Silicon Carbide Schottky | 650V | 17A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | |
| APT10SCD65KCT | MICROSEMI POWER PRODUCTS GROUP | Silicon Carbide Schottky | 650V | 17A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 |
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