DSEI12-06A |
IXYS CORP |
|
Standard
|
600V
|
14A
|
1.7V @ 16A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
50µA @ 600V
|
-
|
0.5°C/W Cs
|
-40°C ~ 150°C
|
Through Hole
|
TO-220-2
|
C4D10120A |
CREE INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
14A
|
1.8V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
250µA @ 1200V
|
754pF @ 0V, 1MHz
|
1.1°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
C4D10120E |
CREE INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
14A
|
1.8V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
250µA @ 1200V
|
754pF @ 0V, 1MHz
|
0.88°C/W Jc
|
-55°C ~ 175°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
FFPF14X150STU |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
1500V (1.5kV)
|
14A
|
2.4V @ 14A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
120ns
|
20µA @ 1500V
|
-
|
1.5°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2 Full Pack, Isolated Tab
|
BYT79-500,127 |
NXP SEMICONDUCTORS |
|
Standard
|
500V
|
14A
|
1.38V @ 30A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
60ns
|
50µA @ 500V
|
-
|
2°C/W Jl
|
150°C (Max)
|
Through Hole
|
TO-220-2
|
BYV79E-200,127 |
NXP SEMICONDUCTORS |
|
Standard
|
200V
|
14A
|
1.05V @ 14A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
30ns
|
50µA @ 200V
|
-
|
2°C/W Jl
|
150°C (Max)
|
Through Hole
|
TO-220-2
|