14A,Current - Average Rectified (Io)
6 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
DSEI12-06A IXYS CORP
Standard 600V 14A 1.7V @ 16A Fast Recovery =< 500ns, > 200mA (Io) 50ns 50µA @ 600V - 0.5°C/W Cs -40°C ~ 150°C Through Hole TO-220-2
C4D10120A CREE INC
Silicon Carbide Schottky 1200V (1.2kV) 14A 1.8V @ 10A No Recovery Time > 500mA (Io) 0ns 250µA @ 1200V 754pF @ 0V, 1MHz 1.1°C/W Jc -55°C ~ 175°C Through Hole TO-220-2
C4D10120E CREE INC
Silicon Carbide Schottky 1200V (1.2kV) 14A 1.8V @ 10A No Recovery Time > 500mA (Io) 0ns 250µA @ 1200V 754pF @ 0V, 1MHz 0.88°C/W Jc -55°C ~ 175°C Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
FFPF14X150STU FAIRCHILD SEMICONDUCTOR CORP
Standard 1500V (1.5kV) 14A 2.4V @ 14A Fast Recovery =< 500ns, > 200mA (Io) 120ns 20µA @ 1500V - 1.5°C/W Jc -65°C ~ 150°C Through Hole TO-220-2 Full Pack, Isolated Tab
BYT79-500,127 NXP SEMICONDUCTORS
Standard 500V 14A 1.38V @ 30A Fast Recovery =< 500ns, > 200mA (Io) 60ns 50µA @ 500V - 2°C/W Jl 150°C (Max) Through Hole TO-220-2
BYV79E-200,127 NXP SEMICONDUCTORS
Standard 200V 14A 1.05V @ 14A Fast Recovery =< 500ns, > 200mA (Io) 30ns 50µA @ 200V - 2°C/W Jl 150°C (Max) Through Hole TO-220-2