| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TRS10E65C,S1Q | TOSHIBA CORP | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 650V | - | - | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| SIDC03D60C6 | INFINEON TECHNOLOGIES AG | Standard | 600V | 10A (DC) | 1.95V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | -40°C ~ 175°C | Surface Mount | Wafer | |
| SIDC06D60E6 | INFINEON TECHNOLOGIES AG | Standard | 600V | 10A (DC) | 1.25V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 600V | - | - | -55°C ~ 150°C | Surface Mount | Wafer | |
| SIDC08D120H6 | INFINEON TECHNOLOGIES AG | Standard | 1200V (1.2kV) | 10A (DC) | 1.6V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 27µA @ 1200V | - | - | -55°C ~ 150°C | Surface Mount | Wafer | |
| SIDC24D30SIC3 | INFINEON TECHNOLOGIES AG | Silicon Carbide Schottky | 300V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 300V | 600pF @ 1V, 1MHz | - | -55°C ~ 175°C | Surface Mount | Wafer | |
| RJU6052TDPP-EJ#T2 | RENESAS ELECTRONICS CORP | Standard | 600V | 10A (DC) | 3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 600V | - | - | 150°C (Max) | Through Hole | TO-220-2 Full Pack |
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