IDH10SG60C |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
10A (DC)
|
2.1V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
90µA @ 600V
|
290pF @ 1V, 1MHz
|
1.25°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
IDD10SG60C |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
10A (DC)
|
2.1V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
90µA @ 600V
|
290pF @ 1V, 1MHz
|
1.25°C/W Jc
|
-55°C ~ 175°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
IDB10S60C |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
10A (DC)
|
1.7V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
140µA @ 600V
|
480pF @ 1V, 1MHz
|
1.8°C/W Jc
|
-55°C ~ 175°C
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
IDH10S60C |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
10A (DC)
|
1.7V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
140µA @ 600V
|
480pF @ 1V, 1MHz
|
1.5°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
SDT10S60 |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
10A (DC)
|
1.7V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
350µA @ 600V
|
350pF @ 0V, 1MHz
|
2°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
SIDC03D60C6 |
INFINEON TECHNOLOGIES AG |
|
Standard
|
600V
|
10A (DC)
|
1.95V @ 10A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
27µA @ 600V
|
-
|
-
|
-40°C ~ 175°C
|
Surface Mount
|
Wafer
|
SIDC06D60E6 |
INFINEON TECHNOLOGIES AG |
|
Standard
|
600V
|
10A (DC)
|
1.25V @ 10A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
27µA @ 600V
|
-
|
-
|
-55°C ~ 150°C
|
Surface Mount
|
Wafer
|
RJU6052TDPP-EJ#T2 |
RENESAS ELECTRONICS CORP |
|
Standard
|
600V
|
10A (DC)
|
3V @ 10A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
1µA @ 600V
|
-
|
-
|
150°C (Max)
|
Through Hole
|
TO-220-2 Full Pack
|
SCS110AMC |
ROHM CO LTD |
|
Silicon Carbide Schottky
|
600V
|
10A (DC)
|
1.7V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 600V
|
430pF @ 1V, 1MHz
|
4.4°C/W Jc
|
150°C (Max)
|
Through Hole
|
TO-220-2
|