SCS210AGC |
ROHM CO LTD |
|
Silicon Carbide Schottky
|
650V
|
10A (DC)
|
1.55V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 600V
|
365pF @ 1V, 1MHz
|
1.9°C/W Jc
|
175°C (Max)
|
Through Hole
|
TO-220-2
|
SCS210KGC |
ROHM CO LTD |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
10A (DC)
|
1.6V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 1200V
|
550pF @ 1V, 1MHz
|
0.99°C/W Jc
|
175°C (Max)
|
Through Hole
|
TO-220-2
|
IDH10SG60C |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
10A (DC)
|
2.1V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
90µA @ 600V
|
290pF @ 1V, 1MHz
|
1.25°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
IDH10G65C5 |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
650V
|
10A (DC)
|
1.7V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
340µA @ 650V
|
300pF @ 1V, 1MHz
|
1.7°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
IDH10S60C |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
10A (DC)
|
1.7V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
140µA @ 600V
|
480pF @ 1V, 1MHz
|
1.5°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
SDT10S30 |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
300V
|
10A (DC)
|
1.7V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 300V
|
600pF @ 0V, 1MHz
|
2.3°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
SDT10S60 |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
600V
|
10A (DC)
|
1.7V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
350µA @ 600V
|
350pF @ 0V, 1MHz
|
2°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
IDH10S120 |
INFINEON TECHNOLOGIES AG |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
10A (DC)
|
1.8V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
240µA @ 1200V
|
500pF @ 1V, 1MHz
|
1°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
BY359-1500,127 |
NXP SEMICONDUCTORS |
|
Standard
|
1500V (1.5kV)
|
10A (DC)
|
1.8V @ 20A
|
Standard Recovery >500ns, > 200mA (Io)
|
600ns
|
100µA @ 1300V
|
-
|
2°C/W Jl
|
150°C (Max)
|
Through Hole
|
TO-220-2
|
SCS210AMC |
ROHM CO LTD |
|
Silicon Carbide Schottky
|
650V
|
10A (DC)
|
1.55V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 600V
|
365pF @ 1V, 1MHz
|
4.3°C/W Jc
|
175°C (Max)
|
Through Hole
|
TO-220-2
|