1.75A,Current - Average Rectified (Io)
24 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
1N6628 MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 600V 1.75A 1.35V @ 2A Fast Recovery =< 500ns, > 200mA (Io) 45ns 2µA @ 600V - 22°C/W Jl -65°C ~ 150°C Through Hole A, Axial
1N6627 MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 440V 1.75A 1.35V @ 2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 2µA @ 440V 40pF @ 10V, 1MHz 22°C/W Jl -65°C ~ 150°C Through Hole A, Axial
1N6627US MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 440V 1.75A 1.35V @ 2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 2µA @ 440V 40pF @ 10V, 1MHz 6.5°C/W Jl -65°C ~ 150°C Surface Mount SQ-MELF, A
1N6626 MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 220V 1.75A 1.35V @ 2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 2µA @ 220V 40pF @ 10V, 1MHz 22°C/W Jl -65°C ~ 150°C Through Hole A, Axial
1N6626US MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 220V 1.75A 1.35V @ 2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 2µA @ 220V 40pF @ 10V, 1MHz 6.5°C/W Jl -65°C ~ 150°C Surface Mount SQ-MELF, A
1N6628US MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 660V 1.75A 1.35V @ 2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 2µA @ 660V 40pF @ 10V, 1MHz 6.5°C/W Jl -65°C ~ 150°C Surface Mount SQ-MELF, A
JANTX1N6626US MICROSEMI CORP
Standard 200V 1.75A 1.35V @ 2A Fast Recovery =< 500ns, > 200mA (Io) 45ns 2µA @ 200V - 6.5°C/W Jl -65°C ~ 150°C - -
JANTX1N6626 MICROSEMI CORP
Standard 220V 1.75A 1.35V @ 2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 2µA @ 220V 40pF @ 10V, 1MHz 22°C/W Jl -65°C ~ 150°C Through Hole E, Axial
JAN1N6626US MICROSEMI CORP
Standard 220V 1.75A 1.35V @ 1.2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 2µA @ 220V 40pF @ 10V, 1MHz 6.5°C/W Jl -65°C ~ 150°C - -
JANTX1N6627 MICROSEMI CORP
Standard 440V 1.75A 1.35V @ 2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 2µA @ 440V 40pF @ 10V, 1MHz 22°C/W Jl -65°C ~ 150°C Through Hole E, Axial