-,Current - Average Rectified (Io)
Fast Recovery =< 500ns, > 200mA (Io),Speed
15 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
1N6630US MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 900V - - Fast Recovery =< 500ns, > 200mA (Io) - 4µA @ 100V - 6.5°C/W Jc -65°C ~ 150°C Surface Mount E-MELF
JANTX1N4500 MICROSEMI CORP
Standard 80V - 1.1V @ 300mA Fast Recovery =< 500ns, > 200mA (Io) 6ns 100nA @ 75V - - -65°C ~ 175°C Through Hole DO-204AH, DO-35, Axial
JAN1N6626 MICROSEMI CORP
Standard 220V - 1.35V @ 1.2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 2µA @ 220V 40pF @ 10V, 1MHz - -65°C ~ 175°C Through Hole E, Axial
JAN1N6627 MICROSEMI CORP
Standard 440V - 1.35V @ 1.2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 2µA @ 440V 40pF @ 10V, 1MHz - -65°C ~ 175°C Through Hole E, Axial
JAN1N6628 MICROSEMI CORP
Standard 660V - 1.35V @ 1.2A Fast Recovery =< 500ns, > 200mA (Io) 30ns 2µA @ 600V - - -65°C ~ 175°C Through Hole E, Axial
JAN1N6629 MICROSEMI CORP
Standard 880V - 1.4V @ 1A Fast Recovery =< 500ns, > 200mA (Io) 50ns 2µA @ 800V - - -65°C ~ 175°C Through Hole E, Axial
JAN1N6631 MICROSEMI CORP
Standard 1100V (1.1kV) - 1.6V @ 1A Fast Recovery =< 500ns, > 200mA (Io) 60ns 2µA @ 1000V - - -65°C ~ 175°C Through Hole E, Axial
BYD37M,115 NXP SEMICONDUCTORS
Avalanche 1000V (1kV) - 1.3V @ 1A Fast Recovery =< 500ns, > 200mA (Io) 300ns 1µA @ 1000V 20pF @ 0V, 1MHz 150°C/W Ja -65°C ~ 175°C Surface Mount SOD-87
BYD77B,115 NXP SEMICONDUCTORS
Avalanche 100V - 980mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 25ns 1µA @ 100V 50pF @ 0V, 1MHz 150°C/W Ja -65°C ~ 175°C Surface Mount SOD-87
BYD77D,115 NXP SEMICONDUCTORS
Avalanche 200V - 980mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 25ns 1µA @ 200V 50pF @ 0V, 1MHz 150°C/W Ja -65°C ~ 175°C Surface Mount SOD-87