1N6630US |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Standard
|
900V
|
-
|
-
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
4µA @ 100V
|
-
|
6.5°C/W Jc
|
-65°C ~ 150°C
|
Surface Mount
|
E-MELF
|
JANTX1N4500 |
MICROSEMI CORP |
|
Standard
|
80V
|
-
|
1.1V @ 300mA
|
Fast Recovery =< 500ns, > 200mA (Io)
|
6ns
|
100nA @ 75V
|
-
|
-
|
-65°C ~ 175°C
|
Through Hole
|
DO-204AH, DO-35, Axial
|
JAN1N6626 |
MICROSEMI CORP |
|
Standard
|
220V
|
-
|
1.35V @ 1.2A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
30ns
|
2µA @ 220V
|
40pF @ 10V, 1MHz
|
-
|
-65°C ~ 175°C
|
Through Hole
|
E, Axial
|
JAN1N6627 |
MICROSEMI CORP |
|
Standard
|
440V
|
-
|
1.35V @ 1.2A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
30ns
|
2µA @ 440V
|
40pF @ 10V, 1MHz
|
-
|
-65°C ~ 175°C
|
Through Hole
|
E, Axial
|
JAN1N6628 |
MICROSEMI CORP |
|
Standard
|
660V
|
-
|
1.35V @ 1.2A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
30ns
|
2µA @ 600V
|
-
|
-
|
-65°C ~ 175°C
|
Through Hole
|
E, Axial
|
JAN1N6629 |
MICROSEMI CORP |
|
Standard
|
880V
|
-
|
1.4V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
50ns
|
2µA @ 800V
|
-
|
-
|
-65°C ~ 175°C
|
Through Hole
|
E, Axial
|
JAN1N6631 |
MICROSEMI CORP |
|
Standard
|
1100V (1.1kV)
|
-
|
1.6V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
60ns
|
2µA @ 1000V
|
-
|
-
|
-65°C ~ 175°C
|
Through Hole
|
E, Axial
|
BYD37M,115 |
NXP SEMICONDUCTORS |
|
Avalanche
|
1000V (1kV)
|
-
|
1.3V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
300ns
|
1µA @ 1000V
|
20pF @ 0V, 1MHz
|
150°C/W Ja
|
-65°C ~ 175°C
|
Surface Mount
|
SOD-87
|
BYD77B,115 |
NXP SEMICONDUCTORS |
|
Avalanche
|
100V
|
-
|
980mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
1µA @ 100V
|
50pF @ 0V, 1MHz
|
150°C/W Ja
|
-65°C ~ 175°C
|
Surface Mount
|
SOD-87
|
BYD77D,115 |
NXP SEMICONDUCTORS |
|
Avalanche
|
200V
|
-
|
980mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
1µA @ 200V
|
50pF @ 0V, 1MHz
|
150°C/W Ja
|
-65°C ~ 175°C
|
Surface Mount
|
SOD-87
|