SB190-T |
DIODES INC |
|
Schottky
|
90V
|
1A
|
800mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
500µA @ 90V
|
-
|
50°C/W Ja
|
-65°C ~ 125°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
MS109E3/TR12 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Schottky
|
90V
|
1A
|
810mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 90V
|
-
|
25°C/W Jl
|
-55°C ~ 175°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
MS109E3/TR8 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Schottky
|
90V
|
1A
|
810mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 90V
|
-
|
25°C/W Jl
|
-55°C ~ 175°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
MS109/TR12 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Schottky
|
90V
|
1A
|
810mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 90V
|
-
|
25°C/W Jl
|
-55°C ~ 175°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
MS109/TR8 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Schottky
|
90V
|
1A
|
810mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 90V
|
-
|
25°C/W Jl
|
-55°C ~ 175°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
MSG109 |
MICROSEMI CORP |
|
Schottky
|
90V
|
1A
|
810mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 90V
|
-
|
-
|
-
|
Through Hole
|
DO-204AL, DO-41, Axial
|
RB160A90T-32 |
ROHM CO LTD |
|
Schottky
|
90V
|
1A
|
730mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 90V
|
-
|
-
|
150°C (Max)
|
Through Hole
|
DO-204AL, DO-41, Axial
|
SB1H90-E3/73 |
VISHAY SEMICONDUCTORS |
|
Schottky
|
90V
|
1A
|
770mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
1µA @ 90V
|
-
|
57°C/W Ja
|
175°C (Max)
|
Through Hole
|
DO-204AL, DO-41, Axial
|
SB1H90-E3/54 |
VISHAY SEMICONDUCTORS |
|
Schottky
|
90V
|
1A
|
770mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
1µA @ 90V
|
-
|
57°C/W Ja
|
175°C (Max)
|
Through Hole
|
DO-204AL, DO-41, Axial
|
VS-11DQ09 |
VISHAY SEMICONDUCTORS |
|
Schottky
|
90V
|
1.1A
|
850mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
500µA @ 90V
|
-
|
100°C/W Ja
|
-40°C ~ 150°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|