SB190-T |
DIODES INC |
|
Schottky
|
90V
|
1A
|
800mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
500µA @ 90V
|
-
|
50°C/W Ja
|
-65°C ~ 125°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
SB390-T |
DIODES INC |
|
Schottky
|
90V
|
3A
|
790mV @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
500µA @ 90V
|
-
|
20°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
MBR1090G |
ON SEMICONDUCTOR |
|
Schottky
|
90V
|
10A
|
800mV @ 10A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 90V
|
-
|
2°C/W Jc
|
-65°C ~ 175°C
|
Through Hole
|
TO-220-2
|
SB590-T |
DIODES INC |
|
Schottky
|
90V
|
5A
|
800mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
500µA @ 90V
|
-
|
10°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
MS109E3/TR12 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Schottky
|
90V
|
1A
|
810mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 90V
|
-
|
25°C/W Jl
|
-55°C ~ 175°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
MS109E3/TR8 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Schottky
|
90V
|
1A
|
810mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 90V
|
-
|
25°C/W Jl
|
-55°C ~ 175°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
MS109/TR12 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Schottky
|
90V
|
1A
|
810mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 90V
|
-
|
25°C/W Jl
|
-55°C ~ 175°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
MS109/TR8 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Schottky
|
90V
|
1A
|
810mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 90V
|
-
|
25°C/W Jl
|
-55°C ~ 175°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
MSG109 |
MICROSEMI CORP |
|
Schottky
|
90V
|
1A
|
810mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 90V
|
-
|
-
|
-
|
Through Hole
|
DO-204AL, DO-41, Axial
|
MBR1090 |
ON SEMICONDUCTOR |
|
Schottky
|
90V
|
10A
|
800mV @ 10A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 90V
|
-
|
2°C/W Jc
|
-65°C ~ 175°C
|
Through Hole
|
TO-220-2
|