| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GB01SLT06-214 | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 650V | 1A (DC) | 2V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 6.5V | 76pF @ 1V, 1MHz | 3.55°C/W Jc | -55°C ~ 175°C | - | - | |
| 1N8032-GA | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 650V | 2.5A | 1.3V @ 2.5A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 274pF @ 1V, 1MHz | 3.4°C/W Jc | -55°C ~ 250°C | Through Hole | TO-257-3 | |
| C3D08065A | CREE INC | Silicon Carbide Schottky | 650V | 8A | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 441pF @ 0V, 1MHz | 1.5°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| C3D08065I | CREE INC | Silicon Carbide Schottky | 650V | 8A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 441pF @ 0V, 1MHz | 3.1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 Isolated Tab | |
| C3D10065A | CREE INC | Silicon Carbide Schottky | 650V | 10A | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 480pF @ 0V, 1MHz | 1.1°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| C3D10065I | CREE INC | Silicon Carbide Schottky | 650V | 10A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 480pF @ 0V, 1MHz | 2.6°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 Isolated Tab | |
| C3D04065A | CREE INC | Silicon Carbide Schottky | 650V | 4A | 1.8V @ 4A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 251pF @ 0V, 1MHz | 2.02°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| C3D06065A | CREE INC | Silicon Carbide Schottky | 650V | 6A | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 294pF @ 0V, 1MHz | 1.6°C/W Jc | -55°C ~ 175°C | Through Hole | TO-220-2 | |
| 1N8031-GA | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 650V | 1A | 1.5V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 76pF @ 1V, 1MHz | 3.55°C/W Jc | -55°C ~ 250°C | Through Hole | TO-276AA | |
| 1N8030-GA | GENESIC SEMICONDUCTOR INC | Silicon Carbide Schottky | 650V | 750mA | 1.39V @ 750mA | No Recovery Time > 500mA (Io) | 0ns | 5µA @ 650V | 76pF @ 1V, 1MHz | 9.52°C/W Jc | -55°C ~ 250°C | Through Hole | TO-257-3 |
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