| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MURS105T3G | ON SEMICONDUCTOR | Standard | 50V | 2A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 50V | - | 13°C/W Jl | -65°C ~ 175°C | Surface Mount | DO-214AA, SMB | |
| CD214B-R350 | BOURNS INC | Standard | 50V | 3A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 40pF @ 4V, 1MHz | 13°C/W Jl | -65°C ~ 175°C | Surface Mount | DO-214AA, SMB | |
| CEFB101-G | COMCHIP TECHNOLOGY CORP | Standard | 50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 50V | - | 13°C/W Jl | 150°C (Max) | Surface Mount | DO-214AA, SMB | |
| 1N5802US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | 13°C/W Jl | -65°C ~ 175°C | - | - | |
| 1N6073US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 50V | 3A | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 50V | - | 13°C/W Jl | -65°C ~ 155°C | - | - | |
| 1N6073 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 50V | 850mA | 2.04V @ 9.4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 50V | - | 13°C/W Jl | -65°C ~ 155°C | Through Hole | A, Axial | |
| 1N6076 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 50V | 1.3A | 1.76V @ 18.8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | - | 13°C/W Jl | -65°C ~ 155°C | Through Hole | A, Axial | |
| 1N6079 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 50V | 2A | 1.5V @ 37.7A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 50V | - | 13°C/W Jl | -65°C ~ 155°C | Through Hole | A, Axial | |
| JANTX1N5802US | MICROSEMI CORP | Standard | 50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | 13°C/W Jl | -65°C ~ 175°C | - | - | |
| JANTXV1N5802US | MICROSEMI CORP | Standard | 50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | 13°C/W Jl | -65°C ~ 175°C | - | - |
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