MURA105T3G |
ON SEMICONDUCTOR |
|
Standard
|
50V
|
2A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
30ns
|
2µA @ 50V
|
-
|
24°C/W Jl
|
-65°C ~ 175°C
|
Surface Mount
|
DO-214AC, SMA
|
MUR105G |
ON SEMICONDUCTOR |
|
Standard
|
50V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
2µA @ 50V
|
-
|
72°C/W Ja
|
-65°C ~ 175°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
CEFB101-G |
COMCHIP TECHNOLOGY CORP |
|
Standard
|
50V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
5µA @ 50V
|
-
|
13°C/W Jl
|
150°C (Max)
|
Surface Mount
|
DO-214AA, SMB
|
CEFM101-G |
COMCHIP TECHNOLOGY CORP |
|
Standard
|
50V
|
1A (DC)
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
5µA @ 50V
|
15pF @ 4V, 1MHz
|
-
|
-55°C ~ 150°C
|
Surface Mount
|
SOD-123T
|
1N5802 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Standard
|
50V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
1µA @ 50V
|
25pF @ 10V, 1MHz
|
36°C/W Jl
|
-65°C ~ 175°C
|
Through Hole
|
A, Axial
|
1N5802US |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Standard
|
50V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
1µA @ 50V
|
25pF @ 10V, 1MHz
|
13°C/W Jl
|
-65°C ~ 175°C
|
-
|
-
|
JANTX1N5802 |
MICROSEMI CORP |
|
Standard
|
50V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
1µA @ 50V
|
25pF @ 10V, 1MHz
|
36°C/W Jl
|
-65°C ~ 175°C
|
Through Hole
|
A, Axial
|
JANTXV1N5802 |
MICROSEMI CORP |
|
Standard
|
50V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
1µA @ 50V
|
25pF @ 10V, 1MHz
|
36°C/W Jl
|
-65°C ~ 175°C
|
Through Hole
|
A, Axial
|
JANTX1N5802US |
MICROSEMI CORP |
|
Standard
|
50V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
1µA @ 50V
|
25pF @ 10V, 1MHz
|
13°C/W Jl
|
-65°C ~ 175°C
|
-
|
-
|
JANTXV1N5802US |
MICROSEMI CORP |
|
Standard
|
50V
|
1A
|
875mV @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
25ns
|
1µA @ 50V
|
25pF @ 10V, 1MHz
|
13°C/W Jl
|
-65°C ~ 175°C
|
-
|
-
|