MBR1050 |
FAIRCHILD SEMICONDUCTOR CORP |
|
Schottky
|
50V
|
10A
|
800mV @ 10A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 50V
|
-
|
2°C/W Jl
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
MBR1050 |
DIODES INC |
|
Schottky
|
50V
|
10A
|
950mV @ 10A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
100µA @ 50V
|
400pF @ 4V, 1MHz
|
2.5°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
SBL550 |
DIODES INC |
|
Schottky
|
50V
|
5A
|
700mV @ 5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
500µA @ 50V
|
-
|
3°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
MBR750 |
DIODES INC |
|
Schottky
|
50V
|
7.5A
|
750mV @ 7.5A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
500µA @ 50V
|
400pF @ 4V, 1MHz
|
3.5°C/W Jc
|
-55°C ~ 150°C
|
Through Hole
|
TO-220-2
|
SBL1050 |
DIODES INC |
|
Schottky
|
50V
|
10A
|
750mV @ 10A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
1mA @ 50V
|
-
|
3.5°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
FR801 |
DIODES INC |
|
Standard
|
50V
|
8A
|
1.3V @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
150ns
|
10µA @ 50V
|
-
|
-
|
-65°C ~ 175°C
|
Through Hole
|
TO-220-2
|
SBL1650 |
DIODES INC |
|
Schottky
|
50V
|
16A
|
750mV @ 16A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
1mA @ 50V
|
-
|
3.5°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
SBL850 |
DIODES INC |
|
Schottky
|
50V
|
8A
|
700mV @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
500µA @ 50V
|
-
|
6.9°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
MBR1650 |
DIODES INC |
|
Schottky
|
50V
|
16A
|
750mV @ 16A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
1mA @ 50V
|
450pF @ 4V, 1MHz
|
3°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|
FES16AT |
FAIRCHILD SEMICONDUCTOR CORP |
|
Standard
|
50V
|
16A
|
950mV @ 8A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 50V
|
170pF @ 4V, 1MHz
|
1.2°C/W Jc
|
-65°C ~ 150°C
|
Through Hole
|
TO-220-2
|