| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| UG4D-E3/54 | VISHAY SEMICONDUCTORS | Standard | 200V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 200V | 20pF @ 4V, 1MHz | 25°C/W Ja | -55°C ~ 150°C | Through Hole | DO-201AD, Axial | |
| SBYV28-200-E3/73 | VISHAY SEMICONDUCTORS | Standard | 200V | 3.5A | 1.1V @ 3.5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 200V | 20pF @ 4V, 1MHz | 25°C/W Ja | -55°C ~ 150°C | Through Hole | DO-201AD, Axial | |
| UG4D-E3/73 | VISHAY SEMICONDUCTORS | Standard | 200V | 4A | 950mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 200V | 20pF @ 4V, 1MHz | 25°C/W Ja | -55°C ~ 150°C | Through Hole | DO-201AD, Axial | |
| SBYV28-200-E3/54 | VISHAY SEMICONDUCTORS | Standard | 200V | 3.5A | 1.1V @ 3.5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 200V | 20pF @ 4V, 1MHz | 25°C/W Ja | -55°C ~ 150°C | Through Hole | DO-201AD, Axial |
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