VSB3200-M3/54 |
VISHAY SEMICONDUCTORS |
|
Schottky
|
200V
|
3A
|
1.2V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
60µA @ 200V
|
175pF @ 4V, 1MHz
|
62°C/W Ja
|
-40°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
VSB3200-E3/73 |
VISHAY SEMICONDUCTORS |
|
Schottky
|
200V
|
3A
|
-
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
-
|
175pF @ 4V, 1MHz
|
62°C/W Ja
|
-40°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
VSB3200-E3/54 |
VISHAY SEMICONDUCTORS |
|
Schottky
|
200V
|
3A
|
-
|
Fast Recovery =< 500ns, > 200mA (Io)
|
-
|
-
|
175pF @ 4V, 1MHz
|
62°C/W Ja
|
-40°C ~ 150°C
|
Through Hole
|
DO-201AD, Axial
|
FESB16DT-E3/45 |
VISHAY SEMICONDUCTORS |
|
Standard
|
200V
|
16A
|
975mV @ 16A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 200V
|
175pF @ 4V, 1MHz
|
1.2°C/W Jc
|
-65°C ~ 150°C
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
FESB16DT-E3/81 |
VISHAY SEMICONDUCTORS |
|
Standard
|
200V
|
16A
|
975mV @ 16A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 200V
|
175pF @ 4V, 1MHz
|
1.2°C/W Jc
|
-65°C ~ 150°C
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
FESB16DTHE3/45 |
VISHAY SEMICONDUCTORS |
|
Standard
|
200V
|
16A
|
975mV @ 16A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 200V
|
175pF @ 4V, 1MHz
|
1.2°C/W Jc
|
-65°C ~ 150°C
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|
FESB16DTHE3/81 |
VISHAY SEMICONDUCTORS |
|
Standard
|
200V
|
16A
|
975mV @ 16A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
35ns
|
10µA @ 200V
|
175pF @ 4V, 1MHz
|
1.2°C/W Jc
|
-65°C ~ 150°C
|
Surface Mount
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|