200V, Reverse DC Voltage(Vr)
1µA @ 200V, Reverse Leakage Current @ Vr
55°C/W Ja,Thermal Resistance
8 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
1N3611GP-E3/54 VISHAY SEMICONDUCTORS
Standard 200V 1A 1V @ 1A Standard Recovery >500ns, > 200mA (Io) 2µs 1µA @ 200V - 55°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial
1N4942GP-E3/54 VISHAY SEMICONDUCTORS
Standard 200V 1A 1.3V @ 1A Fast Recovery =< 500ns, > 200mA (Io) 150ns 1µA @ 200V 15pF @ 4V, 1MHz 55°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial
1N4942GP-E3/73 VISHAY SEMICONDUCTORS
Standard 200V 1A 1.3V @ 1A Fast Recovery =< 500ns, > 200mA (Io) 150ns 1µA @ 200V 15pF @ 4V, 1MHz 55°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial
1N3611GP-E3/73 VISHAY SEMICONDUCTORS
Standard 200V 1A 1V @ 1A Standard Recovery >500ns, > 200mA (Io) 2µs 1µA @ 200V - 55°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial
1N4942GPHE3/73 VISHAY SEMICONDUCTORS
Standard 200V 1A 1.3V @ 1A Fast Recovery =< 500ns, > 200mA (Io) 150ns 1µA @ 200V 15pF @ 4V, 1MHz 55°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial
1N4942GPHE3/54 VISHAY SEMICONDUCTORS
Standard 200V 1A 1.3V @ 1A Fast Recovery =< 500ns, > 200mA (Io) 150ns 1µA @ 200V 15pF @ 4V, 1MHz 55°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial
1N3611GPHE3/54 VISHAY SEMICONDUCTORS
Standard 200V 1A 1V @ 1A Standard Recovery >500ns, > 200mA (Io) 2µs 1µA @ 200V - 55°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial
1N3611GPHE3/73 VISHAY SEMICONDUCTORS
Standard 200V 1A 1V @ 1A Standard Recovery >500ns, > 200mA (Io) 2µs 1µA @ 200V - 55°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial