| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BYV98-200-TR | VISHAY SEMICONDUCTORS | Avalanche | 200V | 4A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | 25°C/W Ja | -55°C ~ 175°C | Through Hole | SOD-64, Axial | |
| BYV28-200-TAP | VISHAY SEMICONDUCTORS | Avalanche | 200V | 3.5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 200V | - | 70°C/W Ja | -55°C ~ 175°C | Through Hole | SOD-64, Axial | |
| GI822-E3/54 | VISHAY SEMICONDUCTORS | Standard | 200V | 5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 200V | 300pF @ 4V, 1MHz | 10°C/W Ja | -50°C ~ 150°C | Through Hole | P600, Axial | |
| GI822-E3/73 | VISHAY SEMICONDUCTORS | Standard | 200V | 5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 200V | 300pF @ 4V, 1MHz | 10°C/W Ja | -50°C ~ 150°C | Through Hole | P600, Axial |
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