| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| CSFMT104-HF | COMCHIP TECHNOLOGY CORP | Standard | 200V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 10pF @ 4V, 1MHz | 42°C/W Ja | -55°C ~ 150°C | Surface Mount | SOD-123H | |
| MBRS3201T3G | ON SEMICONDUCTOR | Schottky | 200V | 3A | 840mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1mA @ 200V | - | 12°C/W Jl | -55°C ~ 150°C | Surface Mount | DO-214AB, SMC | |
| MBRS4201T3G | ON SEMICONDUCTOR | Schottky | 200V | 4A | 860mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1mA @ 200V | - | 11°C/W Jl | -55°C ~ 150°C | Surface Mount | DO-214AB, SMC | |
| NRVBS3201T3G | ON SEMICONDUCTOR | Schottky | 200V | 3A | 840mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1mA @ 200V | - | 12°C/W Jl | -55°C ~ 150°C | Surface Mount | DO-214AB, SMC | |
| NRVBS4201T3G | ON SEMICONDUCTOR | Schottky | 200V | 4A | 860mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1mA @ 200V | - | 11°C/W Jl | -55°C ~ 150°C | Surface Mount | DO-214AB, SMC | |
| CSFM103-G | COMCHIP TECHNOLOGY CORP | Standard | 200V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 10pF @ 4V, 1MHz | 42°C/W Ja | -55°C ~ 150°C | Surface Mount | SOD-123T | |
| MBRS3201T3 | ON SEMICONDUCTOR | Schottky | 200V | 3A | 840mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1mA @ 200V | - | 12°C/W Jl | -55°C ~ 150°C | Surface Mount | DO-214AB, SMC | |
| MBRS4201T3 | ON SEMICONDUCTOR | Schottky | 200V | 4A | 860mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1mA @ 200V | - | 11°C/W Jl | -55°C ~ 150°C | Surface Mount | DO-214AB, SMC | |
| FES8DT-E3/45 | VISHAY SEMICONDUCTORS | Standard | 200V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | 2.2°C/W Jc | -55°C ~ 150°C | Through Hole | TO-220-2 | |
| FESB8DT-E3/45 | VISHAY SEMICONDUCTORS | Standard | 200V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | - | 2.2°C/W Jc | -55°C ~ 150°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
© 2016 Copyright
