150V, Reverse DC Voltage(Vr)
22pF @ 4V, 1MHz,Capacitance @ Vr, F
6 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
EGP10C-E3/54 VISHAY SEMICONDUCTORS
Standard 150V 1A 950mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 50ns 5µA @ 150V 22pF @ 4V, 1MHz 50°C/W Ja -65°C ~ 150°C Through Hole DO-204AL, DO-41, Axial
EGP10C-E3/73 VISHAY SEMICONDUCTORS
Standard 150V 1A 950mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 50ns 5µA @ 150V 22pF @ 4V, 1MHz 50°C/W Ja -65°C ~ 150°C Through Hole DO-204AL, DO-41, Axial
EGP10CHE3/54 VISHAY SEMICONDUCTORS
Standard 150V 1A 950mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 50ns 5µA @ 150V 22pF @ 4V, 1MHz 50°C/W Ja -65°C ~ 150°C Through Hole DO-204AL, DO-41, Axial
EGP10CHE3/73 VISHAY SEMICONDUCTORS
Standard 150V 1A 950mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 50ns 5µA @ 150V 22pF @ 4V, 1MHz 50°C/W Ja -65°C ~ 150°C Through Hole DO-204AL, DO-41, Axial
EGP10CEHE3/54 VISHAY SEMICONDUCTORS
Standard 150V 1A 950mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 50ns 5µA @ 150V 22pF @ 4V, 1MHz 50°C/W Ja -65°C ~ 150°C Through Hole DO-204AL, DO-41, Axial
EGP10CE-E3/54 VISHAY SEMICONDUCTORS
Standard 150V 1A 950mV @ 1A Fast Recovery =< 500ns, > 200mA (Io) 50ns 5µA @ 150V 22pF @ 4V, 1MHz 50°C/W Ja -65°C ~ 150°C Through Hole DO-204AL, DO-41, Axial