| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BYW29E-150,127 | NXP SEMICONDUCTORS | Standard | 150V | 8A | 1.05V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 150V | - | 2.7°C/W Jl | 150°C (Max) | Through Hole | TO-220-2 | |
| BYW29-150-E3/45 | VISHAY SEMICONDUCTORS | Standard | 150V | 8A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 150V | 45pF @ 4V, 1MHz | 2.5°C/W Jc | -65°C ~ 150°C | Through Hole | TO-220-2 | |
| BYW29-150HE3/45 | VISHAY SEMICONDUCTORS | Standard | 150V | 8A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 150V | 45pF @ 4V, 1MHz | 2.5°C/W Jc | -65°C ~ 150°C | Through Hole | TO-220-2 |
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