150V, Reverse DC Voltage(Vr)
8A,Current - Average Rectified (Io)
34 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
MUR815G ON SEMICONDUCTOR
Standard 150V 8A 975mV @ 8A Fast Recovery =< 500ns, > 200mA (Io) 35ns 5µA @ 150V - 3°C/W Jc -65°C ~ 175°C Through Hole TO-220-2
BY229X-200,127 NXP SEMICONDUCTORS
Standard 150V 8A 1.85V @ 20A Fast Recovery =< 500ns, > 200mA (Io) 135ns 400µA @ 150V - 60°C/W Ja 150°C (Max) Through Hole TO-220-2 Full Pack, Isolated Tab
BYW29E-150,127 NXP SEMICONDUCTORS
Standard 150V 8A 1.05V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 25ns 10µA @ 150V - 2.7°C/W Jl 150°C (Max) Through Hole TO-220-2
MUR815 ON SEMICONDUCTOR
Standard 150V 8A 975mV @ 8A Fast Recovery =< 500ns, > 200mA (Io) 35ns 5µA @ 150V - 3°C/W Jc -65°C ~ 175°C Through Hole TO-220-2
U8CT-E3/4W VISHAY SEMICONDUCTORS
Standard 150V 8A 1.02V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 20ns 10µA @ 150V - 4°C/W Jc -55°C ~ 150°C Through Hole, Radial TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
UB8CT-E3/4W VISHAY SEMICONDUCTORS
Standard 150V 8A 1.02V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 20ns 10µA @ 150V - 4°C/W Jc -55°C ~ 150°C Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
UB8CT-E3/8W VISHAY SEMICONDUCTORS
Standard 150V 8A 1.02V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 20ns 10µA @ 150V - 4°C/W Jc -55°C ~ 150°C Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FES8CT-E3/45 VISHAY SEMICONDUCTORS
Standard 150V 8A 950mV @ 8A Fast Recovery =< 500ns, > 200mA (Io) 35ns 10µA @ 150V - 2.2°C/W Jc -55°C ~ 150°C Through Hole TO-220-2
UF8CT-E3/4W VISHAY SEMICONDUCTORS
Standard 150V 8A 1.02V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 20ns 10µA @ 150V - 5°C/W Jc -55°C ~ 150°C Through Hole TO-220-2 Full Pack, Isolated Tab
UG8CT-E3/45 VISHAY SEMICONDUCTORS
Standard 150V 8A 1V @ 8A Fast Recovery =< 500ns, > 200mA (Io) 30ns 10µA @ 150V - 4°C/W Jc -55°C ~ 150°C Through Hole TO-220-2