| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SBR2U150SA-13 | DIODES INC | Super Barrier | 150V | 2A | 800mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 75µA @ 150V | - | 3°C/W Jl | -65°C ~ 175°C | Surface Mount | DO-214AC, SMA | |
| PDS4150-13 | DIODES INC | Schottky | 150V | 4A | 760mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 150V | - | 2°C/W Jl | -65°C ~ 175°C | Surface Mount | - | |
| EGF1C | FAIRCHILD SEMICONDUCTOR CORP | Standard | 150V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 150V | 15pF @ 4V, 1MHz | 30°C/W Jl | -65°C ~ 175°C | Surface Mount | DO-214AC, SMA | |
| 1N5811US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 50V | 60pF @ 10V, 1MHz | 6.5°C/W Jl | -65°C ~ 175°C | - | - | |
| 1N5806US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | 13°C/W Jl | -65°C ~ 175°C | - | - | |
| 1N5806TR | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 150V | 2.5A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | - | 36°C/W Jl | -65°C ~ 175°C | Through Hole | A, Axial | |
| 1N5811TR | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 150V | 6A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | - | 22°C/W Jl | -65°C ~ 175°C | - | - | |
| JANTX1N5806 | MICROSEMI CORP | Standard | 150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | 36°C/W Jl | -65°C ~ 175°C | Through Hole | A, Axial | |
| JANS1N5806 | MICROSEMI CORP | Standard | 150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | 36°C/W Jl | -65°C ~ 175°C | Through Hole | A, Axial | |
| JANS1N5806US | MICROSEMI CORP | Standard | 150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | 13°C/W Jl | -65°C ~ 175°C | - | - |
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