CD214A-R11200 |
BOURNS INC |
|
Standard
|
1200V (1.2kV)
|
1A
|
1.25V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
5µA @ 1200V
|
12pF @ 4V, 1MHz
|
27°C/W Jl
|
-65°C ~ 175°C
|
Surface Mount
|
DO-214AC, SMA
|
C4D05120A |
CREE INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
8.2A
|
1.8V @ 5A
|
No Recovery Time > 500mA (Io)
|
0ns
|
150µA @ 1200V
|
390pF @ 0V, 1MHz
|
1.85°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
C4D05120E |
CREE INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
8.2A
|
1.8V @ 5A
|
No Recovery Time > 500mA (Io)
|
0ns
|
150µA @ 1200V
|
390pF @ 0V, 1MHz
|
1.55°C/W Jc
|
-55°C ~ 175°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
C2D05120E |
CREE INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
10A
|
1.8V @ 5A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 1200V
|
455pF @ 0V, 1MHz
|
-
|
-
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
C4D08120E |
CREE INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
12.1A
|
3V @ 2A
|
No Recovery Time > 500mA (Io)
|
0ns
|
250µA @ 1200V
|
560pF @ 0V, 1MHz
|
1.1°C/W Jc
|
-55°C ~ 175°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
C4D08120A |
CREE INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
11.3A
|
1.8V @ 7.5A
|
No Recovery Time > 500mA (Io)
|
0ns
|
250µA @ 1200V
|
560pF @ 0V, 1MHz
|
1.26°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
C4D10120A |
CREE INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
14A
|
1.8V @ 10A
|
No Recovery Time > 500mA (Io)
|
0ns
|
250µA @ 1200V
|
754pF @ 0V, 1MHz
|
1.1°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
C4D02120E |
CREE INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
6.9A (DC)
|
1.8V @ 2A
|
No Recovery Time > 500mA (Io)
|
0ns
|
50µA @ 1200V
|
167pF @ 0V, 1MHz
|
2.9°C/W Jc
|
-55°C ~ 175°C
|
Surface Mount
|
TO-252-3, DPak (2 Leads + Tab), SC-63
|
C4D02120A |
CREE INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
5.9A
|
1.8V @ 2A
|
No Recovery Time > 500mA (Io)
|
0ns
|
50µA @ 1200V
|
167pF @ 0V, 1MHz
|
3.7°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|
C2D05120A |
CREE INC |
|
Silicon Carbide Schottky
|
1200V (1.2kV)
|
10A
|
1.8V @ 5A
|
No Recovery Time > 500mA (Io)
|
0ns
|
200µA @ 1200V
|
455pF @ 0V, 1MHz
|
1°C/W Jc
|
-55°C ~ 175°C
|
Through Hole
|
TO-220-2
|