1N6625US |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Standard
|
1100V (1.1kV)
|
1A
|
1.75V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
60ns
|
1µA @ 1100V
|
10pF @ 10V, 1MHz
|
13°C/W Jl
|
-65°C ~ 150°C
|
Surface Mount
|
SQ-MELF, A
|
CD214A-R11100 |
BOURNS INC |
|
Standard
|
1100V (1.1kV)
|
1A
|
1.25V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
5µA @ 1100V
|
12pF @ 4V, 1MHz
|
27°C/W Jl
|
-65°C ~ 175°C
|
Surface Mount
|
DO-214AC, SMA
|
1N6625 |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Standard
|
1100V (1.1kV)
|
1A
|
1.75V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
60ns
|
1µA @ 1100V
|
10pF @ 10V, 1MHz
|
38°C/W Jl
|
-65°C ~ 150°C
|
Through Hole
|
A, Axial
|
JANTX1N6625 |
MICROSEMI CORP |
|
Standard
|
1100V (1.1kV)
|
1A
|
1.75V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
60ns
|
500nA @ 1100V
|
10pF @ 10V, 1MHz
|
38°C/W Jl
|
-65°C ~ 150°C
|
Through Hole
|
A, Axial
|
JANTXV1N6625 |
MICROSEMI CORP |
|
Standard
|
1100V (1.1kV)
|
1A
|
1.75V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
60ns
|
1µA @ 1100V
|
-
|
38°C/W Jl
|
-65°C ~ 150°C
|
Through Hole
|
A, Axial
|
JANTX1N6625US |
MICROSEMI CORP |
|
Standard
|
1100V (1.1kV)
|
1A
|
1.75V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
60ns
|
500nA @ 1100V
|
10pF @ 10V, 1MHz
|
13°C/W Jl
|
-65°C ~ 150°C
|
-
|
-
|
JANTXV1N6625US |
MICROSEMI CORP |
|
Standard
|
1100V (1.1kV)
|
1A
|
1.75V @ 1A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
60ns
|
1µA @ 1100V
|
-
|
13°C/W Jl
|
-65°C ~ 150°C
|
-
|
-
|
GP10N-E3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
1100V (1.1kV)
|
1A
|
1.2V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
3µs
|
5µA @ 1100V
|
7pF @ 4V, 1MHz
|
55°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
GP10NHE3/54 |
VISHAY SEMICONDUCTORS |
|
Standard
|
1100V (1.1kV)
|
1A
|
1.2V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
3µs
|
5µA @ 1100V
|
7pF @ 4V, 1MHz
|
55°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|