| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N6625US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 1100V (1.1kV) | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 1µA @ 1100V | 10pF @ 10V, 1MHz | 13°C/W Jl | -65°C ~ 150°C | Surface Mount | SQ-MELF, A | |
| 1N6631 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 1100V (1.1kV) | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 4µA @ 1100V | 40pF @ 10V, 1MHz | 22°C/W Jl | -65°C ~ 150°C | Through Hole | A, Axial | |
| 1N6625 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 1100V (1.1kV) | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 1µA @ 1100V | 10pF @ 10V, 1MHz | 38°C/W Jl | -65°C ~ 150°C | Through Hole | A, Axial | |
| 1N6631US | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 1100V (1.1kV) | 1.4A | 1.4V @ 1.4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 4µA @ 1100V | 40pF @ 10V, 1MHz | 6.5°C/W Jl | -65°C ~ 150°C | Surface Mount | SQ-MELF, A | |
| JANTX1N6625 | MICROSEMI CORP | Standard | 1100V (1.1kV) | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 500nA @ 1100V | 10pF @ 10V, 1MHz | 38°C/W Jl | -65°C ~ 150°C | Through Hole | A, Axial | |
| JANTXV1N6625 | MICROSEMI CORP | Standard | 1100V (1.1kV) | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 1µA @ 1100V | - | 38°C/W Jl | -65°C ~ 150°C | Through Hole | A, Axial | |
| JANTX1N6625US | MICROSEMI CORP | Standard | 1100V (1.1kV) | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 500nA @ 1100V | 10pF @ 10V, 1MHz | 13°C/W Jl | -65°C ~ 150°C | - | - | |
| JANTXV1N6625US | MICROSEMI CORP | Standard | 1100V (1.1kV) | 1A | 1.75V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 1µA @ 1100V | - | 13°C/W Jl | -65°C ~ 150°C | - | - | |
| GP10N-E3/54 | VISHAY SEMICONDUCTORS | Standard | 1100V (1.1kV) | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 1100V | 7pF @ 4V, 1MHz | 55°C/W Ja | -65°C ~ 150°C | Through Hole | DO-204AL, DO-41, Axial | |
| GP10NHE3/54 | VISHAY SEMICONDUCTORS | Standard | 1100V (1.1kV) | 1A | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 3µs | 5µA @ 1100V | 7pF @ 4V, 1MHz | 55°C/W Ja | -65°C ~ 150°C | Through Hole | DO-204AL, DO-41, Axial |
© 2016 Copyright
