1000V (1kV), Reverse DC Voltage(Vr)
72°C/W Ja,Thermal Resistance
8 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
MUR1100-TP MICRO COMMERCIAL COMPONENTS
Standard 1000V (1kV) 1A 1.75V @ 1A Fast Recovery =< 500ns, > 200mA (Io) 75ns 5µA @ 1000V - 72°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial
MUR1100ERLG ON SEMICONDUCTOR
Standard 1000V (1kV) 1A 1.75V @ 1A Fast Recovery =< 500ns, > 200mA (Io) 100ns 10µA @ 1000V - 72°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial
MUR2100ERLG ON SEMICONDUCTOR
Standard 1000V (1kV) 2A 2.2V @ 2A Fast Recovery =< 500ns, > 200mA (Io) 100ns 10µA @ 1000V - 72°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial
MUR1100EG ON SEMICONDUCTOR
Standard 1000V (1kV) 1A 1.75V @ 1A Fast Recovery =< 500ns, > 200mA (Io) 100ns 10µA @ 1000V - 72°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial
MUR2100EG ON SEMICONDUCTOR
Standard 1000V (1kV) 2A 2.2V @ 2A Fast Recovery =< 500ns, > 200mA (Io) 100ns 10µA @ 1000V - 72°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial
MUR1100ERL ON SEMICONDUCTOR
Standard 1000V (1kV) 1A 1.75V @ 1A Fast Recovery =< 500ns, > 200mA (Io) 100ns 10µA @ 1000V - 72°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial
MUR2100E ON SEMICONDUCTOR
Standard 1000V (1kV) 2A 2.2V @ 2A Fast Recovery =< 500ns, > 200mA (Io) 100ns 10µA @ 1000V - 72°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial
MUR2100ERL ON SEMICONDUCTOR
Standard 1000V (1kV) 2A 2.2V @ 2A Fast Recovery =< 500ns, > 200mA (Io) 100ns 10µA @ 1000V - 72°C/W Ja -65°C ~ 175°C Through Hole DO-204AL, DO-41, Axial