1N5622US |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Standard
|
1000V (1kV)
|
1A
|
1.3V @ 3A
|
Standard Recovery >500ns, > 200mA (Io)
|
2µs
|
500nA @ 1000V
|
-
|
13°C/W Jl
|
-65°C ~ 200°C
|
-
|
-
|
1N5623US |
MICROSEMI COMMERCIAL BUSINESS UNIT |
|
Standard
|
1000V (1kV)
|
1A
|
1.6V @ 3A
|
Fast Recovery =< 500ns, > 200mA (Io)
|
500ns
|
500nA @ 1000V
|
15pF @ 12V, 1MHz
|
13°C/W Jl
|
-65°C ~ 175°C
|
-
|
-
|
JANTXV1N5622US |
MICROSEMI CORP |
|
Standard
|
1000V (1kV)
|
1A
|
1.3V @ 3A
|
Standard Recovery >500ns, > 200mA (Io)
|
2µs
|
500nA @ 1000V
|
-
|
13°C/W Jl
|
-65°C ~ 200°C
|
-
|
-
|
S3M-E3/9AT |
VISHAY SEMICONDUCTORS |
|
Standard
|
1000V (1kV)
|
3A
|
1.15V @ 2.5A
|
Standard Recovery >500ns, > 200mA (Io)
|
2.5µs
|
10µA @ 1000V
|
60pF @ 4V, 1MHz
|
13°C/W Jl
|
-55°C ~ 150°C
|
Surface Mount
|
DO-214AB, SMC
|
S3MHE3_A/I |
VISHAY SEMICONDUCTORS |
|
Standard
|
1000V (1kV)
|
3A
|
1.15V @ 2.5A
|
Standard Recovery >500ns, > 200mA (Io)
|
2.5µs
|
10µA @ 1000V
|
60pF @ 4V, 1MHz
|
13°C/W Jl
|
-55°C ~ 150°C
|
-
|
-
|
S3MHE3/9AT |
VISHAY SEMICONDUCTORS |
|
Standard
|
1000V (1kV)
|
3A
|
1.15V @ 2.5A
|
Standard Recovery >500ns, > 200mA (Io)
|
2.5µs
|
10µA @ 1000V
|
60pF @ 4V, 1MHz
|
13°C/W Jl
|
-55°C ~ 150°C
|
Surface Mount
|
DO-214AB, SMC
|
S3MHE3/57T |
VISHAY SEMICONDUCTORS |
|
Standard
|
1000V (1kV)
|
3A
|
1.15V @ 2.5A
|
Standard Recovery >500ns, > 200mA (Io)
|
2.5µs
|
10µA @ 1000V
|
60pF @ 4V, 1MHz
|
13°C/W Jl
|
-55°C ~ 150°C
|
Surface Mount
|
DO-214AB, SMC
|
S3M-E3/57T |
VISHAY SEMICONDUCTORS |
|
Standard
|
1000V (1kV)
|
3A
|
1.15V @ 2.5A
|
Standard Recovery >500ns, > 200mA (Io)
|
2.5µs
|
10µA @ 1000V
|
60pF @ 4V, 1MHz
|
13°C/W Jl
|
-55°C ~ 150°C
|
Surface Mount
|
DO-214AB, SMC
|