1000V (1kV), Reverse DC Voltage(Vr)
13°C/W Jl,Thermal Resistance
8 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
1N5622US MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 1000V (1kV) 1A 1.3V @ 3A Standard Recovery >500ns, > 200mA (Io) 2µs 500nA @ 1000V - 13°C/W Jl -65°C ~ 200°C - -
1N5623US MICROSEMI COMMERCIAL BUSINESS UNIT
Standard 1000V (1kV) 1A 1.6V @ 3A Fast Recovery =< 500ns, > 200mA (Io) 500ns 500nA @ 1000V 15pF @ 12V, 1MHz 13°C/W Jl -65°C ~ 175°C - -
JANTXV1N5622US MICROSEMI CORP
Standard 1000V (1kV) 1A 1.3V @ 3A Standard Recovery >500ns, > 200mA (Io) 2µs 500nA @ 1000V - 13°C/W Jl -65°C ~ 200°C - -
S3M-E3/9AT VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 3A 1.15V @ 2.5A Standard Recovery >500ns, > 200mA (Io) 2.5µs 10µA @ 1000V 60pF @ 4V, 1MHz 13°C/W Jl -55°C ~ 150°C Surface Mount DO-214AB, SMC
S3MHE3_A/I VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 3A 1.15V @ 2.5A Standard Recovery >500ns, > 200mA (Io) 2.5µs 10µA @ 1000V 60pF @ 4V, 1MHz 13°C/W Jl -55°C ~ 150°C - -
S3MHE3/9AT VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 3A 1.15V @ 2.5A Standard Recovery >500ns, > 200mA (Io) 2.5µs 10µA @ 1000V 60pF @ 4V, 1MHz 13°C/W Jl -55°C ~ 150°C Surface Mount DO-214AB, SMC
S3MHE3/57T VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 3A 1.15V @ 2.5A Standard Recovery >500ns, > 200mA (Io) 2.5µs 10µA @ 1000V 60pF @ 4V, 1MHz 13°C/W Jl -55°C ~ 150°C Surface Mount DO-214AB, SMC
S3M-E3/57T VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 3A 1.15V @ 2.5A Standard Recovery >500ns, > 200mA (Io) 2.5µs 10µA @ 1000V 60pF @ 4V, 1MHz 13°C/W Jl -55°C ~ 150°C Surface Mount DO-214AB, SMC