1N4007G-T |
DIODES INC |
|
Standard
|
1000V (1kV)
|
1A
|
1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
2µs
|
5µA @ 1000V
|
8pF @ 4V, 1MHz
|
100°C/W Ja
|
-65°C ~ 175°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
1N4007-T |
DIODES INC |
|
Standard
|
1000V (1kV)
|
1A
|
1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
5µA @ 1000V
|
8pF @ 4V, 1MHz
|
100°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
D7G-T |
DIODES INC |
|
Standard
|
1000V (1kV)
|
1A
|
1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
2µs
|
5µA @ 1000V
|
8pF @ 4V, 1MHz
|
100°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
T1, Axial
|
1N4007GL-T |
DIODES INC |
|
Standard
|
1000V (1kV)
|
1A
|
1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
2µs
|
5µA @ 1000V
|
8pF @ 4V, 1MHz
|
100°C/W Ja
|
-65°C ~ 175°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
1N4007L-T |
DIODES INC |
|
Standard
|
1000V (1kV)
|
1A
|
1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
-
|
5µA @ 1000V
|
8pF @ 4V, 1MHz
|
100°C/W Ja
|
-65°C ~ 150°C
|
Through Hole
|
DO-204AL, DO-41, Axial
|
BYW56-TR |
VISHAY SEMICONDUCTORS |
|
Avalanche
|
1000V (1kV)
|
2A
|
1V @ 1A
|
Standard Recovery >500ns, > 200mA (Io)
|
4µs
|
1µA @ 1000V
|
-
|
100°C/W Ja
|
-55°C ~ 175°C
|
Through Hole
|
SOD-57, Axial
|