1000V (1kV), Reverse DC Voltage(Vr)
30pF @ 4V, 1MHz,Capacitance @ Vr, F
-55°C ~ 150°C,Operating Temperature - Junction
8 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
1N5408 FAIRCHILD SEMICONDUCTOR CORP
Standard 1000V (1kV) 3A 1.2V @ 3A Standard Recovery >500ns, > 200mA (Io) - 5µA @ 1000V 30pF @ 4V, 1MHz 20°C/W Ja -55°C ~ 150°C Through Hole DO-201AD, Axial
1N5408-E3/73 VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 3A 1.2V @ 3A Standard Recovery >500ns, > 200mA (Io) - 5µA @ 1000V 30pF @ 4V, 1MHz 20°C/W Ja -55°C ~ 150°C Through Hole DO-201AD, Axial
S4PM-M3/87A VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 4A 1.1V @ 4A Standard Recovery >500ns, > 200mA (Io) 2.5µs 10µA @ 1000V 30pF @ 4V, 1MHz 4°C/W Jl -55°C ~ 150°C Surface Mount TO-277, 3-PowerDFN
S4PM-M3/86A VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 4A 1.1V @ 4A Standard Recovery >500ns, > 200mA (Io) 2.5µs 10µA @ 1000V 30pF @ 4V, 1MHz 4°C/W Jl -55°C ~ 150°C Surface Mount TO-277, 3-PowerDFN
S4PMHM3/87A VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 4A 1.1V @ 4A Standard Recovery >500ns, > 200mA (Io) 2.5µs 10µA @ 1000V 30pF @ 4V, 1MHz 4°C/W Jl -55°C ~ 150°C Surface Mount TO-277, 3-PowerDFN
S4PMHM3/86A VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 4A 1.1V @ 4A Standard Recovery >500ns, > 200mA (Io) 2.5µs 10µA @ 1000V 30pF @ 4V, 1MHz 4°C/W Jl -55°C ~ 150°C Surface Mount TO-277, 3-PowerDFN
1N5408-E3/54 VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 3A 1.2V @ 3A Standard Recovery >500ns, > 200mA (Io) - 5µA @ 1000V 30pF @ 4V, 1MHz 20°C/W Ja -55°C ~ 150°C Through Hole DO-201AD, Axial
1N5408-E3/51 VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 3A 1.2V @ 3A Standard Recovery >500ns, > 200mA (Io) - 5µA @ 1000V 30pF @ 4V, 1MHz 20°C/W Ja -55°C ~ 150°C Through Hole DO-201AD, Axial