1000V (1kV), Reverse DC Voltage(Vr)
12pF @ 4V, 1MHz,Capacitance @ Vr, F
8 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
CD1408-R11000 BOURNS INC
Standard 1000V (1kV) 1A 1V @ 1A Standard Recovery >500ns, > 200mA (Io) 3µs 1µA @ 1000V 12pF @ 4V, 1MHz 40°C/W Jl -65°C ~ 175°C Surface Mount Chip, Concave Terminals
S1M FAIRCHILD SEMICONDUCTOR CORP
Standard 1000V (1kV) 1A 1.1V @ 1A Standard Recovery >500ns, > 200mA (Io) 1.8µs 1µA @ 1000V 12pF @ 4V, 1MHz 85°C/W Ja -55°C ~ 150°C Surface Mount DO-214AC, SMA
S1M-E3/61T VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 1A 1.1V @ 1A Standard Recovery >500ns, > 200mA (Io) 1.8µs 5µA @ 1000V 12pF @ 4V, 1MHz 85°C/W Ja -55°C ~ 150°C Surface Mount DO-214AC, SMA
CD214A-R11000 BOURNS INC
Standard 1000V (1kV) 1A 1V @ 1A Standard Recovery >500ns, > 200mA (Io) - 5µA @ 1000V 12pF @ 4V, 1MHz 27°C/W Jl -65°C ~ 175°C Surface Mount DO-214AC, SMA
BA159-E3/73 VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 1A 1.3V @ 1A Fast Recovery =< 500ns, > 200mA (Io) 500ns 5µA @ 1000V 12pF @ 4V, 1MHz - -65°C ~ 125°C Through Hole DO-204AL, DO-41, Axial
S1MHE3_A/I VISHAY SEMICONDUCTORS
Single 1000V (1kV) 1A 1.1V @ 1A Standard Recovery >500ns, > 200mA (Io) 1.8µs 5µA @ 1000V 12pF @ 4V, 1MHz 30°C/W Jl -55°C ~ 150°C - -
S1MHE3_A/H VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 1A 1.1V @ 1A Standard Recovery >500ns, > 200mA (Io) 1.8µs 5µA @ 1000V 12pF @ 4V, 1MHz 30°C/W Jl -55°C ~ 150°C - -
BA159-E3/54 VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 1A 1.3V @ 1A Fast Recovery =< 500ns, > 200mA (Io) 500ns 5µA @ 1000V 12pF @ 4V, 1MHz - -65°C ~ 125°C Through Hole DO-204AL, DO-41, Axial