| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1N4249 | MICROSEMI COMMERCIAL BUSINESS UNIT | Standard | 1000V (1kV) | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 1000V | - | 42°C/W Jl | -65°C ~ 175°C | Through Hole | A, Axial | |
| JAN1N4249 | MICROSEMI CORP | Standard | 1000V (1kV) | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 1000V | - | 42°C/W Jl | -65°C ~ 175°C | Through Hole | A, Axial | |
| JANTX1N4249 | MICROSEMI CORP | Standard | 1000V (1kV) | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 1000V | - | 42°C/W Jl | -65°C ~ 175°C | Through Hole | A, Axial | |
| JANTXV1N4249 | MICROSEMI CORP | Standard | 1000V (1kV) | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 1000V | - | 43°C/W Jl | -65°C ~ 175°C | Through Hole | A, Axial | |
| GP30M-E3/54 | VISHAY SEMICONDUCTORS | Standard | 1000V (1kV) | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 1000V | - | 20°C/W Ja | -65°C ~ 175°C | Through Hole | DO-201AD, Axial | |
| GP30M-E3/73 | VISHAY SEMICONDUCTORS | Standard | 1000V (1kV) | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 1000V | - | 20°C/W Ja | -65°C ~ 175°C | Through Hole | DO-201AD, Axial | |
| GP30MHE3/73 | VISHAY SEMICONDUCTORS | Standard | 1000V (1kV) | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 1000V | - | 20°C/W Ja | -65°C ~ 175°C | Through Hole | DO-201AD, Axial | |
| GP30MHE3/54 | VISHAY SEMICONDUCTORS | Standard | 1000V (1kV) | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 1000V | - | 20°C/W Ja | -65°C ~ 175°C | Through Hole | DO-201AD, Axial |
© 2016 Copyright
