1000V (1kV), Reverse DC Voltage(Vr)
450ns,Reverse Recovery Time (trr)
6 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
VS-30EPF10PBF VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 30A 1.41V @ 30A Fast Recovery =< 500ns, > 200mA (Io) 450ns 100µA @ 1000V - 0.2°C/W Cs -40°C ~ 150°C Through Hole TO-247-2
VS-40EPF10PBF VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 40A 1.4V @ 40A Fast Recovery =< 500ns, > 200mA (Io) 450ns 100µA @ 1000V - 0.2°C/W Cs -40°C ~ 150°C Through Hole TO-247-2
30CPF10 VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 30A 1.41V @ 30A Fast Recovery =< 500ns, > 200mA (Io) 450ns 100µA @ 1000V - 0.2°C/W Cs -40°C ~ 150°C Through Hole TO-247-3
30EPF10 VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 30A 1.41V @ 30A Fast Recovery =< 500ns, > 200mA (Io) 450ns 100µA @ 1000V - 0.2°C/W Cs -40°C ~ 150°C Through Hole, Radial TO-247-2
40EPF10 VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 40A 1.4V @ 40A Fast Recovery =< 500ns, > 200mA (Io) 450ns 100µA @ 1000V - 0.2°C/W Cs -40°C ~ 150°C Through Hole, Radial TO-247-2
VS-30CPF10PBF VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 30A 1.41V @ 30A Fast Recovery =< 500ns, > 200mA (Io) 450ns 100µA @ 1000V - 0.2°C/W Cs -40°C ~ 150°C Through Hole TO-247-3