| Part Numbers | Manufacturer Name | Datasheet | Diode Type | Reverse DC Voltage(Vr) | Current - Average Rectified (Io) | Forward Voltage (Vf) | Speed | Reverse Recovery Time (trr) | Reverse Leakage Current @ Vr | Capacitance @ Vr, F | Thermal Resistance | Operating Temperature - Junction | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 6A10-G | COMCHIP TECHNOLOGY CORP | Standard | 1000V (1kV) | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 100pF @ 4V, 1MHz | 10°C/W Ja | -55°C ~ 125°C | Through Hole | R6, Axial | |
| SMLJ60S10-TP | MICRO COMMERCIAL COMPONENTS | Standard | 1000V (1kV) | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | - | - | -55°C ~ 150°C | Surface Mount | DO-214AB, SMC | |
| 60S10-TP | MICRO COMMERCIAL COMPONENTS | Standard | 1000V (1kV) | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | - | - | -55°C ~ 150°C | Through Hole | DO-201AD, Axial | |
| 6A10B-G | COMCHIP TECHNOLOGY CORP | Standard | 1000V (1kV) | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | 100pF @ 4V, 1MHz | 10°C/W Ja | -55°C ~ 125°C | Through Hole | R6, Axial | |
| P600M-E3/73 | VISHAY SEMICONDUCTORS | Standard | 1000V (1kV) | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 1000V | 150pF @ 4V, 1MHz | 20°C/W Ja | -55°C ~ 150°C | Through Hole | P600, Axial | |
| P600M-E3/54 | VISHAY SEMICONDUCTORS | Standard | 1000V (1kV) | 6A | 1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 5µA @ 1000V | 150pF @ 4V, 1MHz | 20°C/W Ja | -55°C ~ 150°C | Through Hole | P600, Axial |
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