1000V (1kV), Reverse DC Voltage(Vr)
1.1V @ 3A, Forward Voltage (Vf)
8 parts found
Part Numbers Manufacturer Name Datasheet Diode Type Reverse DC Voltage(Vr) Current - Average Rectified (Io) Forward Voltage (Vf) Speed Reverse Recovery Time (trr) Reverse Leakage Current @ Vr Capacitance @ Vr, F Thermal Resistance Operating Temperature - Junction Mounting Type Package / Case
CGRB307-G COMCHIP TECHNOLOGY CORP
Standard 1000V (1kV) 3A 1.1V @ 3A Standard Recovery >500ns, > 200mA (Io) - 5µA @ 1000V - 50°C/W Ja 150°C (Max) Surface Mount DO-214AA, SMB
1N5408G-T DIODES INC
Standard 1000V (1kV) 3A 1.1V @ 3A Standard Recovery >500ns, > 200mA (Io) 2µs 5µA @ 1000V 40pF @ 4V, 1MHz 15°C/W Ja -65°C ~ 150°C Through Hole DO-201AD, Axial
CGRC307-G COMCHIP TECHNOLOGY CORP
Standard 1000V (1kV) 3A 1.1V @ 3A Standard Recovery >500ns, > 200mA (Io) - 5µA @ 1000V - 50°C/W Ja 150°C (Max) Surface Mount DO-214AB, SMC
1N5408GP-TP MICRO COMMERCIAL COMPONENTS
Standard 1000V (1kV) 3A 1.1V @ 3A Standard Recovery >500ns, > 200mA (Io) - 5µA @ 1000V 40pF @ 4V, 1MHz 30°C/W Jl -55°C ~ 150°C Through Hole DO-201AD, Axial
GP30M-E3/54 VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 3A 1.1V @ 3A Standard Recovery >500ns, > 200mA (Io) 5µs 5µA @ 1000V - 20°C/W Ja -65°C ~ 175°C Through Hole DO-201AD, Axial
GP30M-E3/73 VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 3A 1.1V @ 3A Standard Recovery >500ns, > 200mA (Io) 5µs 5µA @ 1000V - 20°C/W Ja -65°C ~ 175°C Through Hole DO-201AD, Axial
GP30MHE3/73 VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 3A 1.1V @ 3A Standard Recovery >500ns, > 200mA (Io) 5µs 5µA @ 1000V - 20°C/W Ja -65°C ~ 175°C Through Hole DO-201AD, Axial
GP30MHE3/54 VISHAY SEMICONDUCTORS
Standard 1000V (1kV) 3A 1.1V @ 3A Standard Recovery >500ns, > 200mA (Io) 5µs 5µA @ 1000V - 20°C/W Ja -65°C ~ 175°C Through Hole DO-201AD, Axial